q?v~zy??q?v?_ra]qw??qcabeq HRS75N75V bv dss =70v r ds(on) typ =6 p
i d =48a absolute maximum ratings t c =25 e unless otherwise specified symbol parameter value units v dss drain-source voltage 70 v i d drain current ? continuous (t c = 25 e ) 48* a drain current ? continuous (t c = 100 e ) 30* a i dm drain current ? pulsed (note 1) 192* a v gs gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 810 mj i ar avalanche current (note 1) 48 a e ar repetitive avalanche energy (note 1) 4.8 mj dv/dt peak diode recovery dv/dt 15 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 38 w 0.3 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 3.3 e /w r ja junction-to-ambient -- 62.5 fab 2014 2 1 3 to-220f * drain current limited by maximum junction temperature features HRS75N75V 70v n-channel trench mosfet ? originative new design ? superior avalanche rugged technology ? excellent switching characteristics ? unrivalled gate charge : 80 nc (typ.) ? extended safe operating area ? lower r ds(on) :6.0 p
(typ.) @v gs =10v ? 100% avalanche tested
q?v~zy??q?v?_ra]qw??qcabeq HRS75N75V package marking and odering information device marking week marking package packing quantity rohs status HRS75N75V ywwx to-220f tube 50 pb free HRS75N75V ywwxg to-220f tube 50 halogen free electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 48 a i sm pulsed source-drain diode forward current -- -- 192 v sd source-drain diode forward voltage i s = 48 a, v gs = 0 v -- -- 1.2 v trr reverse recovery time i s = 48 a, v gs = 0 v di f /dt = 100 a/ v (note 3) -- 80 -- qrr reverse recovery charge -- 180 -- nc symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 24 a -- 6.0 7.5 m ? on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 70 -- -- v i dss zero gate voltage drain current v ds = 70 v, v gs = 0 v -- -- 1 3 v ds = 56 v, t c = 150 e -- -- 10 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 4000 5200 ? c oss output capacitance -- 350 455 ? c rss reverse transfer capacitance -- 250 325 ? dynamic characteristics t d(on) turn-on time v ds = 35 v, i d = 40 a, r g = 25 ? (note 4,5) -- 75 160 t r turn-on rise time -- 150 310 t d(off) turn-off delay time -- 150 310 t f turn-off fall time -- 60 130 q g total gate charge v ds = 56 v, i d = 40 a, v gs = 10 v (note 3,4) -- 80 105 nc q gs gate-source charge -- 20 -- nc q gd gate-drain charge -- 30 -- nc switching characteristics source-drain diode maximum ratings and characteristics notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=450uh, i as =48a, v dd =25v, r g =25 : , starting t j =25 q c 3. i sd ? $ ,di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |